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Infineon Technologies SPB08P06P G
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SPB08P06P G
Manufacturers: Infineon Technologies
Qty: 881
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Description: MOSFET P-CH 60V 8.8A
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:8.8 A
Rds On - Drain-Source Resistance:300 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:42 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Reel
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